STGP10M65DF2

STMicroelectronics
511-STGP10M65DF2
STGP10M65DF2

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss

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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
STGP10M65DF2
Tube
Brand: STMicroelectronics
Product Type: IGBT Transistors
Factory Pack Quantity: 2000
Subcategory: IGBTs
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
2 000
Expected 21/09/2026
2 000
Expected 01/01/2027
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,70 € 1,70 €
1,08 € 10,80 €
0,73 € 73,00 €
0,578 € 289,00 €
0,529 € 529,00 €
0,488 € 976,00 €
0,47 € 1 880,00 €