STGWA100H65DFB2

STMicroelectronics
511-STGWA100H65DFB2
STGWA100H65DFB2

Mfr.:

Description:
IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 lon
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In Stock: 1 000

Stock:
1 000 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,47 € 4,47 €
2,75 € 27,50 €
2,51 € 251,00 €

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
145 A
441 W
- 55 C
+ 175 C
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 6,100 g
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

STGWA100H65DFB2 HB2 IGBT

STMicroelectronics STGWA100H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA100H65DFB2 HB2 IGBT features a low VCE(sat) of 1.55V (typical) at an IC of 100A.

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