+358 (0) 800119414

Part of the TTI Family of Specialists Contact Mouser (Lithuania) +358 (0) 800119414 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

STP11N60DM2

Name: STMicroelectronics STP11N60DM2
Brand: STMicroelectronics
SKU: 511-STP11N60DM2
Price: 2.02 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

511-STP11N60DM2

Mfr. No:

STP11N60DM2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

Complete Your Design

Datasheet:

STP11N60DM2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STP11N60DM2

In Stock: 720

Stock:: 720 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,02 €	2,02 €
	1,01 €	10,10 €
	0,886 €	88,60 €
	0,734 €	367,00 €
	0,653 €	653,00 €
	0,605 €	1 210,00 €
	0,575 €	2 875,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	370 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	16.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	110 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	6.3 ns
Series:	STP11N60DM2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	11.7 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STP11N60DM2 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.