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Mfr.	Mfr. No:	Qty	Ext Total

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STPSC10H12CWL

STMicroelectronics

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See Product Specifications

Mouser No:

511-STPSC10H12CWL

Mfr. No:

STPSC10H12CWL

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STPSC10H12CWL Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-LL-3
Configuration:	Dual
If - Forward Current:	5 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.35 V
Ifsm - Forward Surge Current:	210 A
Ir - Reverse Current:	2.5 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	STPSC
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	600
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	800 V
Unit Weight:	6,100 g

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Attributes selected: 0

Filter Document:

Datasheet

STPSC10H12CWL Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-7-29 (PDF)

PCN

Compliance Codes

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

STMICROELECTRONICS

STPSC Schottky Silicon-Carbide Diodes

Superior physical characteristics over standard silicon, with 15% less forward voltage.

600V Power Schottky Silicon Carbide Diode

Ultrahigh performance power schottky diode manufactured using a silicon carbide substrate.

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In Stock: 35

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,30 €	7,30 €
	5,13 €	51,30 €
	4,15 €	415,00 €
	3,69 €	2 214,00 €
	3,27 €	3 924,00 €