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STU6N62K3

Name: STMicroelectronics STU6N62K3
Brand: STMicroelectronics
SKU: 511-STU6N62K3
Price: 2.32 EUR
Availability: InStock

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Mouser No:

511-STU6N62K3

Mfr. No:

STU6N62K3

Mfr.:

STMicroelectronics

Description:

MOSFETs N-Ch, 620V-1.1ohms 5.5A

Complete Your Design

Datasheet:

STU6N62K3 Datasheet (PDF)

ECAD Model:

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In Stock: 2 970

Stock:: 2 970 Can Dispatch Immediately

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Factory Lead Time:: 15 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2970 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,32 €	2,32 €
	1,08 €	10,80 €
	0,98 €	98,00 €
	0,825 €	412,50 €
	0,774 €	774,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	620 V
Id - Continuous Drain Current:	5.5 A
Rds On - Drain-Source Resistance:	1.28 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	90 W
Channel Mode:	Enhancement
Tradename:	SuperMESH
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	19 ns
Product Type:	MOSFETs
Rise Time:	12.5 ns
Series:	STU6N62K3
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	340 mg

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Datasheet

STU6N62K3 Datasheet (PDF)

PCN

TARIC:: 8541210000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

Zener-Protected SuperMESH3 Power MOSFETs

STMicroelectronics Zener-Protected SuperMESH3™ Power MOSFETs are created through increased fine-tuning of STMicroelectronic's strip-based PowerMESH™ layout, combined with optimization of the vertical structure. In addition to significantly reducing ON-resistance, special attention has been taken to ensure these MOSFETs offer dynamic performance with a large avalanche capability. STMicroelectronics Zener-Protected SuperMESH3 Power MOSFETs are offered in voltages up to 1200V. Applications include switch-mode low-power supplies (SMPS), DC-DC converters, switching, and offline power supplies.