BSS138 RFG

Images are for reference only
See Product Specifications

Mouser No:

821-BSS138

Mfr. No:

BSS138 RFG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 50V, 0.26A, Single N-Channel Power MOSFET

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

BSS138 RFG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Taiwan Semiconductor BSS138 RFG

Shipping Alert:

Mouser does not presently sell this product in your region.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	260 mA
Rds On - Drain-Source Resistance:	2.5 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	357 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Taiwan Semiconductor
Configuration:	Single
Fall Time:	48 ns
Forward Transconductance - Min:	0.8 S
Product Type:	MOSFETs
Rise Time:	11 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channe
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	3 ns
Part # Aliases:	BSS138
Unit Weight:	8 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210095
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

BSSx N-Channel & P-Channel Power MOSFETs

Taiwan Semiconductor BSSx N-Channel and P-Channel Power MOSFETs feature a low drain-source on-state resistance (R_DS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. The BSSx power MOSFETs operate from -55°C to 150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.