BSS84 RFG

Name: Taiwan Semiconductor BSS84 RFG
Brand: Taiwan Semiconductor
SKU: 821-BSS84
Price: 0.2 EUR
Availability: InStock

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Mouser No:

821-BSS84

Mfr. No:

BSS84 RFG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs -60, -0.15, Single P-Channel

Datasheet:

BSS84 RFG Datasheet

ECAD Model:

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More Information

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In Stock: 1 377

Stock:: 1 377

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On Order:: 6 000
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,206 €	0,21 €
	0,141 €	1,41 €
	0,089 €	8,90 €
	0,056 €	28,00 €
	0,046 €	46,00 €
Full Reel (Order in multiples of 3000)
	0,032 €	96,00 €
	0,028 €	168,00 €
	0,025 €	225,00 €
	0,023 €	552,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Package/Case:	SOT-23-3
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 155 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Taiwan Semiconductor
Channel Mode:	Enhancement
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	78 ns
Forward Transconductance - Min:	0.5 S
Id - Continuous Drain Current:	150 mA
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Pd - Power Dissipation:	357 mW
Product Type:	MOSFETs
Qg - Gate Charge:	1.9 nC
Rds On - Drain-Source Resistance:	8 Ohms
Rise Time:	15 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 N-Channe
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Part # Aliases:	BSS84
Unit Weight:	8 mg

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Attributes selected: 0

Filter Document:

TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210095
ECCN:: EAR99

BSSx N-Channel & P-Channel Power MOSFETs

Taiwan Semiconductor BSSx N-Channel and P-Channel Power MOSFETs feature a low drain-source on-state resistance (R_DS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. The BSSx power MOSFETs operate from -55°C to 150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.