TSM2N7002AKCU RFG

Taiwan Semiconductor
821-TSM2N7002AKCURFG
TSM2N7002AKCU RFG

Mfr.:

Description:
MOSFETs 60V, 0.24A, Single N-Channel Power MOSFET

Datasheet:
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Learn more about Taiwan Semiconductor TSM2N7002AKCU RFG

In Stock: 176

Stock:
176
Can Dispatch Immediately
On Order:
9 000
Expected 03/06/2026
Factory Lead Time:
19
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,198 € 0,20 €
0,121 € 1,21 €
0,091 € 9,10 €
0,056 € 28,00 €
0,049 € 49,00 €
Full Reel (Order in multiples of 3000)
0,04 € 120,00 €
0,036 € 216,00 €
0,03 € 270,00 €
0,028 € 672,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-323-3
N-Channel
1 Channel
60 V
240 mA
2.5 Ohms
- 20 V, 20 V
2.5 V
680 pC
- 55 C
+ 150 C
Enhancement
Reel
Cut Tape
MouseReel
Brand: Taiwan Semiconductor
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Fall Time: 9.5 ns
Product Type: MOSFETs
Rise Time: 2 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Typical Turn-Off Delay Time: 7.98 ns
Typical Turn-On Delay Time: 2.72 ns
Part # Aliases: TSM2N7002AKCU
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Attributes selected: 0

Datasheet

Models

SPICE Models

TARIC:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
MXHTS:
8541210100
ECCN:
EAR99

TSM2N7002 N-Channel Power MOSFETs

Taiwan Semiconductor TSM2N7002 N-Channel Power MOSFETs feature a low drain-source on-state resistance (RDS(ON)), that minimizes conductive losses. The N-channel power MOSFETs enable a low gate charge for fast power switching. These power MOSFETs are available in single and dual configuration variants. The TSM2N7002 power MOSFETs operate at 60V drain-source breakdown voltage and -55°C to +150°C temperature range. These N-channel power MOSFETs are ideal for low side load switching, level shift circuits, and general switch circuits.

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