It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD19503KCS

Name: Texas Instruments CSD19503KCS
Brand: Texas Instruments
SKU: 595-CSD19503KCS
Price: 2.16 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD19503KCS

Mfr. No:

CSD19503KCS

Mfr.:

Texas Instruments

Description:

MOSFETs 80V 7.6mOhm N-CH Pwr MOSFET

Datasheet:

CSD19503KCS Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD19503KCS

In Stock: 1 554

Stock:: 1 554 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,16 €	2,16 €
	1,17 €	11,70 €
	0,946 €	94,60 €
	0,778 €	389,00 €
	0,676 €	676,00 €
	0,66 €	1 650,00 €
	0,639 €	3 195,00 €
	0,636 €	6 360,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	9.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.8 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	188 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Tube
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	2 ns
Forward Transconductance - Min:	110 S
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	CSD19503KCS
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

CSD19503KCS Datasheet

Images

This functionality requires JavaScript to be enabled.

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.