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CSD25481F4T

Name: Texas Instruments CSD25481F4T
Brand: Texas Instruments
SKU: 595-CSD25481F4T
Price: 0.98 EUR
Availability: InStock

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Mouser No:

595-CSD25481F4T

Mfr. No:

CSD25481F4T

Mfr.:

Texas Instruments

Description:

MOSFETs 20V PCh FemtoFET MO SFET A 595-CSD25481F A 595-CSD25481F4

Datasheet:

CSD25481F4T Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD25481F4T

In Stock: 3 242

Stock:: 3 242 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,989 €	0,99 €
	0,667 €	6,67 €
	0,358 €	35,80 €
Full Reel (Order in multiples of 250)
	0,358 €	89,50 €
	0,317 €	158,50 €
	0,302 €	302,00 €
	0,295 €	737,50 €
	0,287 €	1 435,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25481F4

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,36 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD25481F4

Description:

MOSFETs P-CH Pwr MOSFET 20V 90mohm A 595-CSD2548 A 595-CSD25481F4T

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	2.5 A
Rds On - Drain-Source Resistance:	800 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	913 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Tradename:	FemtoFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	6.7 ns
Forward Transconductance - Min:	3.3 S
Product Type:	MOSFETs
Rise Time:	3.6 ns
Series:	CSD25481F4
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	16.9 ns
Typical Turn-On Delay Time:	4.1 ns
Unit Weight:	0,400 mg

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Datasheet

CSD25481F4T Datasheet

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Function Diagram

PCN

SPICE Models

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TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412101
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.