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CSD25501F3

Name: Texas Instruments CSD25501F3
Brand: Texas Instruments
SKU: 595-CSD25501F3
Price: 0.34 EUR
Availability: InStock

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Mouser No:

595-CSD25501F3

Mfr. No:

CSD25501F3

Mfr.:

Texas Instruments

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25501F3T

Datasheet:

CSD25501F3 Datasheet

ECAD Model:

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Learn more about Texas Instruments CSD25501F3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.6 A
Rds On - Drain-Source Resistance:	260 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.05 V
Qg - Gate Charge:	1.02 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Fall Time:	945 ns
Forward Transconductance - Min:	3.4 S
Product Type:	MOSFETs
Rise Time:	428 ns
Series:	CSD25501F3
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	1154 ns
Typical Turn-On Delay Time:	474 ns
Unit Weight:	0,300 mg

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Datasheet

CSD25501F3 Datasheet

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CSD25501F3 PSPICE Model

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: China

The country is subject to change at the time of shipment.

CSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET

Texas Instruments CSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6V, depending on the duty cycle. The gate leakage (IGSS) through the diode of the Texas Instruments CSD25501F3 increases as VGS is increased above –6V.

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In Stock: 7 045

Stock:: 7 045

Can Dispatch Immediately

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On Order:: 21 000

Expected 27/08/2026
Factory Lead Time:: 9

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,344 €	0,34 €
	0,213 €	2,13 €
	0,134 €	13,40 €
	0,10 €	50,00 €
	0,089 €	89,00 €
Full Reel (Order in multiples of 3000)
	0,074 €	222,00 €
	0,067 €	402,00 €
	0,057 €	513,00 €
	0,054 €	1 296,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD25501F3T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,29 €

Min:

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Mfr.:

Texas Instruments

Mfr. No:

CSD25501F3T

Description:

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CSD25501F3

Mfr.: Texas Instruments

Description: MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25501F3T

Specifications

Documents (2)

Datasheet

SPICE Models

Environmental Documents

Product & Trade Compliance

More Information

CSD25501F3 –20V 64mΩ, P-Channel FemtoFET™ MOSFET

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Mfr.:

Texas Instruments

Description:

MOSFETs -20-V P channel Nex FET power MOSFET s A A 595-CSD25501F3T

FEATURED PRODUCTS

TEXAS INSTRUMENTS