It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD83325LT

Name: Texas Instruments CSD83325LT
Brand: Texas Instruments
SKU: 595-CSD83325LT
Price: 1.67 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD83325LT

Mfr. No:

CSD83325LT

Mfr.:

Texas Instruments

Description:

MOSFETs 12-V N channel NexF ET power MOSFET du A A 595-CSD83325L

Datasheet:

CSD83325LT Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD83325LT

In Stock: 445

Stock:: 445 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,67 €	1,67 €
	1,06 €	10,60 €
	0,707 €	70,70 €
Full Reel (Order in multiples of 250)
	0,707 €	176,75 €
	0,58 €	290,00 €
	0,507 €	507,00 €
	0,466 €	1 165,00 €
	0,423 €	2 115,00 €
	0,42 €	4 200,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD83325L

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,40 €

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD83325L

Description:

MOSFETs 12-V N channel NexF ET power MOSFET dua A 595-CSD83325LT

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	BGA-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	5.9 mOhms
Vgs - Gate-Source Voltage:	- 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	950 mV
Qg - Gate Charge:	8.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.3 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Fall Time:	589 ns
Forward Transconductance - Min:	36 S
Product Type:	MOSFETs
Rise Time:	353 ns
Series:	CSD83325L
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	711 ns
Typical Turn-On Delay Time:	205 ns
Unit Weight:	1,500 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.