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CSD86311W1723

Name: Texas Instruments CSD86311W1723
Brand: Texas Instruments
SKU: 595-CSD86311W1723
Price: 1.29 EUR
Availability: InStock

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Mouser No:

595-CSD86311W1723

Mfr. No:

CSD86311W1723

Mfr.:

Texas Instruments

Description:

MOSFETs Dual N-Channel Nex F ET Pwr MOSFET

Datasheet:

CSD86311W1723 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD86311W1723

In Stock: 3 000

Stock:: 3 000 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 3000 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,29 €	1,29 €
	0,813 €	8,13 €
	0,54 €	54,00 €
	0,424 €	212,00 €
	0,386 €	386,00 €
Full Reel (Order in multiples of 3000)
	0,347 €	1 041,00 €
	0,315 €	1 890,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DSBGA-12
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	42 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	3.1 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Fall Time:	2.9 ns
Forward Transconductance - Min:	6.4 S
Product Type:	MOSFETs
Rise Time:	4.3 ns
Series:	CSD86311W1723
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	13.2 ns
Typical Turn-On Delay Time:	5.4 ns
Unit Weight:	4,100 mg

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8542390990
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.