LMG3410R150RWHT

Texas Instruments
595-LMG3410R150RWHT
LMG3410R150RWHT

Mfr.:

Description:
Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHR

ECAD Model:
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In Stock: 110

Stock:
110 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 110 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
10,54 € 10,54 €
8,28 € 82,80 €
7,71 € 192,75 €
7,16 € 716,00 €
Full Reel (Order in multiples of 250)
6,79 € 1 697,50 €
6,53 € 3 265,00 €
6,42 € 6 420,00 €
2 500 Quote
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
7,87 €
Min:
1

Similar Product

Texas Instruments LMG3410R150RWHR
Texas Instruments
Gate Drivers 600-V 150-m? GaN wit h integrated driver A 595-LMG3410R150RWHT

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
REACH - SVHC:
MOSFET Gate Drivers
Half-Bridge
SMD/SMT
VQFN-32
1 Driver
1 Output
12 A
9.5 V
18 V
Non-Inverting
2.9 ns
26 ns
- 40 C
+ 125 C
LMG3410R150
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Development Kit: LMG3410EVM-031
Features: Integrated Gate Driver, Robust Protection
Logic Type: CMOS
Moisture Sensitive: Yes
Operating Supply Current: 9 mA
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 150 mOhms
Shutdown: Shutdown
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
Products found:
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Attributes selected: 0

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CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

LMG341xR150 GaN FET

Texas Instruments LMG341xR150 GaN FET with integrated driver and protection allows designers to achieve new power density levels and efficiency in power electronics systems. The LMG341xR150 GaN FET features ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. The features allow dense and efficient topologies like the totem pole PFC.