LMG3522R030RQST

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Mouser No:

595-LMG3522R030RQST

Mfr. No:

LMG3522R030RQST

Mfr.:

Texas Instruments

Description:

Gate Drivers 650-V 30-m? GaN FET with integrated driver, protection and temperature reporting 52-VQFN -40 to 150

Lifecycle:

Restricted Availability:

This part number is not currently available from Mouser. Product may be in limited distribution or a factory special order.

Datasheet:

LMG3522R030RQST Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Product:	Driver ICs - Various
Type:	Half-Bridge
Mounting Style:	SMD/SMT
Package/Case:	VQFN-52
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Supply Voltage - Min:	7.5 V
Supply Voltage - Max:	18 V
Configuration:	Non-Inverting
Rise Time:	4.3 ns
Fall Time:	22 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3522R030
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Features:	Robust Protection
Maximum Turn-Off Delay Time:	69 ns
Maximum Turn-On Delay Time:	54 ns
Moisture Sensitive:	Yes
Operating Supply Current:	15.5 mA
Output Voltage:	5 V
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	26 mOhms
Shutdown:	Shutdown
Factory Pack Quantity:	250
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

LMG3522R030RQST Datasheet

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Compliance Codes

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs

Texas Instruments LMG3522R030/LMG3522R030-Q1 650V 30mΩ GaN FETs include an integrated driver and protection for switch-mode power converters. The LMG3522R030/LMG3522R030-Q1 integrates a silicon driver that allows switching speeds up to 150V/ns. The device implements TI’s integrated precision gate bias, resulting in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, supplies clean switching and minimal ringing in hard-switching power supply topologies. An adjustable gate drive strength permits control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.