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LMG5200MOFR

Name: Texas Instruments LMG5200MOFR
Brand: Texas Instruments
SKU: 595-LMG5200MOFR
Price: 12.62 EUR
Availability: InStock

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Mouser No:

595-LMG5200MOFR

Mfr. No:

LMG5200MOFR

Mfr.:

Texas Instruments

Description:

Gate Drivers 80V GaN Half Bridge Power Stage 9-QFM -4 A 595-LMG5200MOFT

Datasheet:

LMG5200MOFR Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments LMG5200MOFR

In Stock: 1 976

Stock:: 1 976 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	12,62 €	12,62 €
	9,59 €	95,90 €
	9,19 €	229,75 €
	8,10 €	810,00 €
	7,71 €	1 927,50 €
	7,52 €	3 760,00 €
Full Reel (Order in multiples of 2000)
	6,40 €	12 800,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	Half-Bridge Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	QFM-9
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	10 A
Supply Voltage - Min:	4.75 V
Supply Voltage - Max:	5.25 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG5200
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Moisture Sensitive:	Yes
Operating Supply Current:	3 mA
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	15 Ohms
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	GaN
Unit Weight:	2,338 g

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Technical Resources

LMG5200 TINA-TI Transient Reference Design (Rev. C)

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

LMG5200 80V GaN Half-Bridge Power Stage

Texas Instruments LMG5200 80V GaN Half-Bridge Power Stage provides an integrated power stage solution using enhancement-mode gallium nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance C_ISS. All the devices are mounted on a completely bond wire-free package platform with minimised package parasitic elements. The TTL logic-compatible inputs can withstand input voltages of up to 12V regardless of the V_CC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.