TK110A10PL,S4X

Toshiba
757-TK110A10PLS4X
TK110A10PL,S4X

Mfr.:

Description:
MOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS

ECAD Model:
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In Stock: 13

Stock:
13
Can Dispatch Immediately
On Order:
300
Expected 15/12/2025
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,59 € 1,59 €
0,722 € 7,22 €
0,68 € 68,00 €
0,605 € 302,50 €
0,456 € 456,00 €
0,438 € 2 190,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
100 V
36 A
16 mOhms
- 20 V, + 20 V
2.5 V
33 nC
- 55 C
+ 175 C
36 W
Enhancement
U-MOSIX-H
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 9 ns
Product Type: MOSFETs
Rise Time: 6 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290095
ECCN:
EAR99

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.