TK3A60DA(STA4,Q,M)

Toshiba
757-TK3A60DASTA4QM
TK3A60DA(STA4,Q,M)

Mfr.:

Description:
MOSFETs N-ch 600V 2.5A 30w 2.8 Ohm

ECAD Model:
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In Stock: 51

Stock:
51 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,40 € 1,40 €
0,696 € 6,96 €
0,56 € 56,00 €
0,474 € 237,00 €
0,407 € 407,00 €
0,406 € 1 015,00 €
0,39 € 1 950,00 €

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
2.5 A
2.8 Ohms
- 30 V, 30 V
2.4 V
9 nC
- 55 C
+ 150 C
30 W
Enhancement
MOSVII
Tube
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: TK3A60DA
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 2 g
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.