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TK3P50D,RQ(S

Name: Toshiba TK3P50D,RQ(S
Brand: Toshiba
SKU: 757-TK3P50DRQS
Price: 1.34 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-TK3P50DRQS

Mfr. No:

TK3P50D,RQ(S

Mfr.:

Toshiba

Description:

MOSFETs N-Ch MOS 3A 500V 60W 280pF 3 Ohm

Datasheet:

TK3P50D,RQ(S Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK3P50D,RQ(S

In Stock: 17

Stock:: 17 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,34 €	1,34 €
	1,03 €	10,30 €
	0,741 €	74,10 €
	0,589 €	294,50 €
	0,543 €	543,00 €
Full Reel (Order in multiples of 2000)
	0,483 €	966,00 €
	0,469 €	1 876,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Tradename:	MOSVII
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Product Type:	MOSFETs
Series:	TK3P50D
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	330 mg

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Datasheet

TK3P50D,RQ(S Datasheet (PDF)

Application Notes

Product Catalogs

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

π-MOS VII MOSFETs

Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to provide a wide selection of voltage and R_DS(ON) ratings. These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range from 2A to 20A. Vishay π-MOS VII MOSFETs are offered in TO-220-3 and TO-252 through-hole packages and compact DPAK-3 and PW-Mold-3 surface mount packages.