It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TK7A80W,S4X

Name: Toshiba TK7A80W,S4X
Brand: Toshiba
SKU: 757-TK7A80WS4X
Price: 2.96 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

757-TK7A80WS4X

Mfr. No:

TK7A80W,S4X

Mfr.:

Toshiba

Description:

MOSFETs Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ

Datasheet:

TK7A80W,S4X Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Toshiba TK7A80W,S4X

In Stock: 551

Stock:: 551 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,96 €	2,96 €
	1,38 €	13,80 €
	1,37 €	137,00 €
	1,30 €	650,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	6.5 A
Rds On - Drain-Source Resistance:	950 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	35 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	TK7A80W
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns
Typical Turn-On Delay Time:	45 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TK7A80W,S4X Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.