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IRFR9014PBF

Name: Vishay IRFR9014PBF
Brand: Vishay Semiconductors
SKU: 844-IRFR9014PBF
Price: 1.29 EUR
Availability: InStock

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See Product Specifications

Mouser No:

844-IRFR9014PBF

Mfr. No:

IRFR9014PBF

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 P-CH 60V 5.1A

Datasheet:

IRFR9014PBF Datasheet

ECAD Model:

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In Stock: 13 137

Stock:: 13 137 Can Dispatch Immediately

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,29 €	1,29 €
	0,44 €	4,40 €
	0,406 €	40,60 €
	0,372 €	186,00 €
	0,348 €	348,00 €
	0,34 €	1 020,00 €
	0,308 €	1 848,00 €

Alternative Packaging

Mfr. Part No.:

IRFR9014TRLPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,78 €

Min:

Mfr. Part No.:

IRFR9014TRPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,96 €

Min:

Mfr. Part No.:

IRFR9014PBF-BE3

Packaging:

Bulk

Availability:

In Stock

Price:

1,73 €

Min:

Similar Product

Mfr.:

Vishay Semiconductors

Mfr. No:

IRFR9014PBF-BE3

Description:

MOSFETs TO252 P-CH 60V 5.1A

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	5.1 A
Rds On - Drain-Source Resistance:	500 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	31 ns
Forward Transconductance - Min:	1.4 S
Product Type:	MOSFETs
Rise Time:	63 ns
Series:	IRFR/U
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	9.6 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	330 mg

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Qualification of ASE as an Additional Assembly Site of DPAK Commercial 
Power Mosfets 

DESCRIPTION OF CHANGE: Vishay Siliconix would like to announce the 
approval of Advanced Semiconductor Engineering (ASE) plant located in 
Weihai, China as an additional assembly facility for DPAK, MOSFET 
devices. 

Please contact a Mouser Technical Sales Representative for further
information.

5-0614-3