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AFGY100T65SPD

Name: onsemi AFGY100T65SPD
Brand: onsemi
SKU: 863-AFGY100T65SPD
Price: 10.71 EUR
Availability: InStock

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Mouser No:

863-AFGY100T65SPD

Mfr. No:

AFGY100T65SPD

Mfr.:

onsemi

Description:

IGBTs FS3 IGBT 650V/100A AND AUTO STEALTH DIODE

Datasheet:

AFGY100T65SPD Datasheet

ECAD Model:

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More Information

Learn more about onsemi AFGY100T65SPD

In Stock: 1 771

Stock:: 1 771 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,71 €	10,71 €
	6,46 €	64,60 €
	5,49 €	658,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-247-3LD
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	120 A
Pd - Power Dissipation:	660 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	AFGY100T65SPD
Packaging:	Tube
Brand:	onsemi
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

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Datasheet

AFGY100T65SPD Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

AFGYx Field Stop Trench IGBTs

onsemi AFGYx Field Stop Trench IGBTs are AEC-Q101 qualified and feature very low conduction and switching losses. These features allow for a high-efficiency operation in various applications, rugged transient reliability, and low EMI.