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NTHL080N120SC1A

Name: onsemi NTHL080N120SC1A
Brand: onsemi
SKU: 863-NTHL080N120SC1A
Price: 11.12 EUR
Availability: InStock

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Mouser No:

863-NTHL080N120SC1A

Mfr. No:

NTHL080N120SC1A

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 80MOHM 1

Datasheet:

NTHL080N120SC1A Datasheet

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In Stock: 1 326

Stock:: 1 326 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,12 €	11,12 €
	6,73 €	67,30 €
	6,54 €	654,00 €
2 700	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	31 A
Rds On - Drain-Source Resistance:	110 mOhms
Vgs - Gate-Source Voltage:	- 15 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	56 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	178 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10 ns
Forward Transconductance - Min:	13 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Series:	NTHL080N120SC1A
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	6 g

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Datasheet

NTHL080N120SC1A Datasheet

PCN

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

NTHL080N120SC1A N-Channel SiC MOSFET

onsemi NTHL080N120SC1A N-Channel MOSFET provides superior switching performance and higher reliability compared to Silicon. This MOSFET offers low ON resistance and a compact chip size that ensures low capacitance and gate charge. onsemi NTHL080N120SC1A MOSFET features high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. Typical applications include uninterruptible power supplies (UPS), DC/DC converters, boost inverters, power factor correction (PFC), photovoltaic (PV) charging, solar inverters, server power supplies, and network power supplies.