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BSC076N04NDATMA1

Name: Infineon BSC076N04NDATMA1
Brand: Infineon Technologies
SKU: 726-BSC076N04NDATMA1
Price: 1.69 EUR
Availability: InStock

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Mouser No:

726-BSC076N04NDATMA1

Mfr. No:

BSC076N04NDATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 40V

Datasheet:

BSC076N04NDATMA1 Datasheet (PDF)

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In Stock: 2 999

Stock:: 2 999 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2999 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,69 €	1,69 €
	1,01 €	10,10 €
	0,476 €	47,60 €
Full Reel (Order in multiples of 5000)
	0,476 €	2 380,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	7.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	38 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	65 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Dual
Fall Time:	7 ns
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	BSC076N04
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	BSC076N04ND SP002594330

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Datasheet

BSC076N04NDATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

OptiMOS™ Dual-Channel Super Cool Power MOSFETs

Infineon Technologies OptiMOS™ Dual-Channel Super Cool Power MOSFETs are N-channel power transistors in a SuperSO8 package with dual-cool capability for enhanced thermal performance. The Infineon OptiMOS Power MOSFETs are developed to increase efficiency, power density, and cost-effectiveness. These devices feature low on-state resistance (R_DS(on)) and low reverse recovery charge (Q_rr), increasing power density while improving robustness and system reliability. The +175°C rating facilitates designs with either more power at a higher operating junction temperature or a longer lifetime at the same operating junction temperature.