C3M0040120K1

Wolfspeed
941-C3M0040120K1
C3M0040120K1

Mfr.:

Description:
SiC MOSFETs SiC, MOSFET, 40mohm, 1200V, TO-247-4 LP, Industrial

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 153

Stock:
153 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
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Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,43 € 10,43 €
7,56 € 75,60 €
7,55 € 906,00 €
5,30 € 2 703,00 €

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
66 A
70 mOhms
- 8 V, + 19 V
3.8 V
94 nC
- 40 C
+ 175 C
242 W
Enhancement
Brand: Wolfspeed
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 20 S
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 16 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 13 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

TO-247-4 Low Profile 1200V SiC Power MOSFETs

Wolfspeed TO-247-4 Low Profile 1200V Silicon Carbide (SiC) Power MOSFETs feature high-speed switching with low capacitances and high blocking voltage with low on-resistance. These power MOSFETs reduce switching losses and cooling requirements, and minimise gate ringing. The 1200V SiC power MOSFETs incorporate a fast intrinsic diode with low reverse recovery (Qrr). These power MOSFETs increase power density and system switching frequency. The 1200V SiC power MOSFETs come in optimised packages with separate driver source pins and are available in a lower profile TO-247-4 package body. These power MOSFETs are halogen-free and RoHS-compliant. Typical applications include motor control, EV battery chargers, high voltage DC/DC converters, solar/ESS, UPS and enterprise PSU.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

1200V Silicon Carbide Power MOSFETs

Wolfspeed  1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

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