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IAUZN08S7N046ATMA1

Name: Infineon IAUZN08S7N046ATMA1
Brand: Infineon Technologies
SKU: 726-IAUZN08S7N046ATM
Price: 2.05 EUR
Availability: InStock

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Mouser No:

726-IAUZN08S7N046ATM

Mfr. No:

IAUZN08S7N046ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 Power-Transistor

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IAUZN08S7N046ATMA1 Datasheet (PDF)

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Learn more about Infineon Technologies IAUZN08S7N046ATMA1

In Stock: 3 340

Stock:: 3 340 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,05 €	2,05 €
	1,31 €	13,10 €
	0,903 €	90,30 €
	0,769 €	384,50 €
	0,642 €	642,00 €
	0,593 €	1 482,50 €
Full Reel (Order in multiples of 5000)
	0,556 €	2 780,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	99 A
Rds On - Drain-Source Resistance:	4.6 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	27.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	94 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	7 ns
Product Type:	MOSFETs
Rise Time:	3.7 ns
Series:	OptiMOS 7
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	12.2 ns
Typical Turn-On Delay Time:	6.4 ns
Part # Aliases:	IAUZN08S7N046 SP006018213

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Datasheet

IAUZN08S7N046ATMA1 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 7 Automotive Power MOSFETs

Infineon Technologies is introducing its leading OptiMOS™ 7 Automotive Power MOSFETs technology with remarkably low on-state resistance, reduced switching losses, and enhanced ruggedness. OptiMOS 7 redefines the landscape of automotive power MOSFETs. The OptiMOS 7 MOSFET technology from Infineon establishes a new standard for automotive applications, allowing performance and efficiency while addressing the challenges of tomorrow's automotive systems.

OptiMOS™ 7 80V Automotive Power MOSFETs

Infineon Technologies OptiMOS™ 7 80V Automotive Power MOSFETs are built with Infineon’s leading-edge, power semiconductor technology. These MOSFETs are designed specifically for the high performance, quality, and robustness needed for demanding automotive applications. The OptiMOS™ 7 80V MOSFETs operate with a ±20V_GS gate source voltage and a temperature range of -55°C to 175°C. These MOSFETs are offered in top-side cooled SSO10T 5x7mm2 SMD package. The SSO10T package helps users achieve advancements in cooling and power density. The 80V power MOSFETs are MSL-1 rated, RoHS compliant, and 100% avalanche tested. These power MOSFETs are ideal for general automotive applications.