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IPF067N20NM6ATMA1

Name: Infineon IPF067N20NM6ATMA1
Brand: Infineon Technologies
SKU: 726-IPF067N20NM6ATMA
Price: 6.89 EUR
Availability: InStock

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Mouser No:

726-IPF067N20NM6ATMA

Mfr. No:

IPF067N20NM6ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET >150 - 400V

Datasheet:

IPF067N20NM6ATMA1 Datasheet (PDF)

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In Stock: 1 532

Stock:: 1 532 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	6,89 €	6,89 €
	4,70 €	47,00 €
	3,64 €	364,00 €
Full Reel (Order in multiples of 1000)
	3,25 €	3 250,00 €
5 000	Quote

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	138 A
Rds On - Drain-Source Resistance:	6.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.7 V
Qg - Gate Charge:	72 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	32 S
Product Type:	MOSFETs
Rise Time:	21 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	IPF067N20NM6 SP005562927

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Datasheet

IPF067N20NM6ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 6 Power MOSFETs

Infineon Technologies OptiMOS™ 6 Power MOSFETs offer next generation, cutting-edge innovation and best-in-class performance. The OptiMOS 6 family utilises thin wafer technology that enables significant performance benefits. Compared to alternative products, the OptiMOS 6 Power MOSFETs have a reduced R_DS(ON) of 30% and are optimised for synchronous rectification.

OptiMOS™ 6 200V Power MOSFETs

Infineon Technologies OptiMOS™ 6 200V Power MOSFETs are N-channel normal level MOSFETs available in PG-TO263-3, PG-TO220-3, and PG-HDSOP-16 packages. These MOSFETs feature excellent gate charge x R_DS(on) product (FOM), very low reverse recovery charge (Q_rr), and low on‑resistance R_DS(on). The OptiMOS™ 6 200V MOSFETs operate at 175°C temperature. These MOSFETs are halogen‑free according to IEC61249‑2‑21 and Moisture Sensitivity Level (MSL 1) classified according to J‑STD-020 standards. The OptiMOS™ 6 200V MOSFETs are ideal for renewables, motor control, audio amplifiers, and industrial applications.