KTDM4G3C618BGIEAT

SMARTsemi
473-M4G3C618BGIEAT
KTDM4G3C618BGIEAT

Mfr.:

Description:
DRAM DRAM DDR3(L) 4GB 256MX16 1866Mbps 1.35V/1.5V 96-FBGA Industrial

ECAD Model:
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Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
933 MHz
FBGA-96
256 M x 16
1.283 V
1.575 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
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Attributes selected: 0

Compliance Codes
CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
1 386
Expected 22/09/2026
Factory Lead Time:
10
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
16,77 € 16,77 €