KTDM4G3C818BGIEAT

Name: SMART KTDM4G3C818BGIEAT
Brand: SMARTsemi
SKU: 473-M4G3C818BGIEAT
Price: 28.6 EUR
Availability: OutOfStock

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Mouser No:

473-M4G3C818BGIEAT

Mfr. No:

KTDM4G3C818BGIEAT

Mfr.:

SMARTsemi

Description:

DRAM DRAM DDR3(L) 4GB 512MX8 1866Mbps 1.35V/1.5V 78-FBGA Industrial

Datasheet:

KTDM4G3C818BGIEAT Datasheet (PDF)

ECAD Model:

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More Information

Learn more about SMARTsemi KTDM4G3C818BGIEAT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SMART
Product Category:	DRAM
RoHS:
Type:	SDRAM - DDR3L
Memory Size:	4 Gbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	933 MHz
Package/Case:	FBGA-78
Organisation:	512 M x 8
Supply Voltage - Min:	1.283 V
Supply Voltage - Max:	1.575 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	KTDM
Packaging:	Tray
Brand:	SMARTsemi
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	210
Subcategory:	Memory & Data Storage

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Datasheet

KTDM4G3C818BGIEAT Datasheet (PDF)

Compliance Codes

CAHTS:: 8542320020
USHTS:: 8542320036
MXHTS:: 8542320299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

DDR3 Memory ICs

SMARTsemi DDR3 Memory ICs feature a double data rate architecture to achieve high-speed operation. The ICs achieve high-speed double-data-rate transfer rates of up to 1866Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3(L) DRAM key features, and all control and address inputs are synchronized with a pair of externally supplied differential clocks.