KTDM4G4B626BGIEAT

SMARTsemi
473-M4G4B626BGIEAT
KTDM4G4B626BGIEAT

Mfr.:

Description:
DRAM DRAM DDR4 4GB 256MX16 2666Mbps 1.2V 96-FBGA Industrial

Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,05 € 10,05 €
9,34 € 93,40 €
9,06 € 226,50 €
8,84 € 442,00 €
8,62 € 862,00 €
8,34 € 1 651,32 €
8,13 € 4 829,22 €
7,92 € 9 408,96 €
2 574 Quote

Product Attribute Attribute Value Select Attribute
SMART
Product Category: DRAM
RoHS:  
SDRAM - DDR4
4 Gbit
16 bit
1.333 GHz
FBGA-96
256 M x 16
1.14 V
1.26 V
- 40 C
+ 85 C
KTDM
Tray
Brand: SMARTsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 198
Subcategory: Memory & Data Storage
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Attributes selected: 0

Datasheet

CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR4 Memory ICs

SMARTsemi DDR4 Memory ICs feature a power supply (JEDEC standard 1.2V) of VDD = 1.2V ± 5%, and VPP = 2.375V to 2.75V. The ICs have up to 8 banks (4 banks x 2 bank groups) for x 16 products. The DDR4 feature a Pseudo Open Drain (POD) interface with a Burst Length (BL) of 8 and 4 with Burst Chop (BC).

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