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MR4A08BCYS35

Name: Everspin Technologies MR4A08BCYS35
Brand: Everspin Technologies
SKU: 936-MR4A08BCYS35
Price: 51.6 EUR
Availability: InStock

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Mouser No:

936-MR4A08BCYS35

Mfr. No:

MR4A08BCYS35

Mfr.:

Everspin Technologies

Description:

MRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM

Datasheet:

MR4A08BCYS35 Datasheet (PDF)

ECAD Model:

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Learn more about Everspin Technologies MR4A08BCYS35

In Stock: 280

Stock:: 280 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	51,60 €	51,60 €
	47,65 €	476,50 €
	46,10 €	1 152,50 €
	44,95 €	2 247,50 €
	43,34 €	4 334,00 €
	43,31 €	11 693,70 €
540	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Everspin Technologies
Product Category:	MRAM
RoHS:
Package/Case:	TSOP-II-44
Interface Type:	Parallel
Memory Size:	16 Mbit
Organisation:	2 M x 8
Data Bus Width:	8 bit
Access Time:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Operating Supply Current:	60 mA, 152 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	MR4A08B
Packaging:	Tray
Brand:	Everspin Technologies
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	600 mW
Product Type:	MRAM
Factory Pack Quantity:	135
Subcategory:	Memory & Data Storage
Tradename:	Parallel I/O (x8)
Unit Weight:	2,200 g

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Datasheet

MR4A08BCYS35 Datasheet (PDF)

PCN

Alternative Format for Trace Codes (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.