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MRFE6VP6300HR5

Name: NXP MRFE6VP6300HR5
Brand: NXP Semiconductors
SKU: 841-MRFE6VP6300HR5
Price: 466.46 EUR
Availability: InStock

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Mouser No:

841-MRFE6VP6300HR5

Mfr. No:

MRFE6VP6300HR5

Mfr.:

NXP Semiconductors

Description:

RF MOSFET Transistors VHV6 300W50VISM NI780H-4

Datasheet:

MRFE6VP6300HR5 Datasheet (PDF)

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Learn more about NXP Semiconductors MRFE6VP6300HR5

In Stock: 527

Stock:: 527 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 50)

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	466,46 €	466,46 €
	406,63 €	4 066,30 €
	401,47 €	10 036,75 €
Full Reel (Order in multiples of 50)
	382,69 €	19 134,50 €
100	Quote

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	NXP
Product Category:	RF MOSFET Transistors
RoHS:
Transistor Polarity:	N-Channel
Technology:	Si
Vds - Drain-Source Breakdown Voltage:	130 V
Operating Frequency:	1.8 MHz to 600 MHz
Gain:	26.5 dB
Output Power:	300 W
Maximum Operating Temperature:	+ 150 C
Mounting Style:	Screw Mount
Package/Case:	NI-780-4
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	NXP Semiconductors
Number of Channels:	2 Channel
Pd - Power Dissipation:	1.05 kW
Product Type:	RF MOSFET Transistors
Series:	MRFE6VP6300H
Factory Pack Quantity:	50
Subcategory:	MOSFETs
Type:	RF Power MOSFET
Vgs - Gate-Source Voltage:	+ 10 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Part # Aliases:	935317343178
Unit Weight:	6,396 g

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Datasheet

MRFE6VP6300HR5 Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

MRFE6VPx Lateral N-Ch Broadband RF Power MOSFETs

NXP's MRFE6VPx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land-mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 V_SWR, a 50V_DC, 230MHz at all phase angles.