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MUN5213DW1T1G

Name: onsemi MUN5213DW1T1G
Brand: onsemi
SKU: 863-MUN5213DW1T1G
Price: 0.2 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-MUN5213DW1T1G

Mfr. No:

MUN5213DW1T1G

Mfr.:

onsemi

Description:

Digital Transistors SS BR XSTR NPN 50V

Datasheet:

MUN5213DW1T1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi MUN5213DW1T1G

In Stock: 27 120

Stock:: 27 120

Can Dispatch Immediately

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On Order:: 3 000

Expected 20/02/2026

21 000

Expected 02/03/2026
Factory Lead Time:: 42

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,206 €	0,21 €
	0,127 €	1,27 €
	0,08 €	8,00 €
	0,058 €	29,00 €
	0,052 €	52,00 €
Full Reel (Order in multiples of 3000)
	0,042 €	126,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

MUN5213DW1T3G

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,21 €

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Digital Transistors
RoHS:
Configuration:	Dual
Transistor Polarity:	NPN
Typical Input Resistor:	47 kOhms
Typical Resistor Ratio:	1
Mounting Style:	SMD/SMT
Package/Case:	SOT-363(PB-Free)-6
DC Collector/Base Gain hFE Min:	80
Collector- Emitter Voltage VCEO Max:	50 V
Continuous Collector Current:	100 mA
Peak DC Collector Current:	100 mA
Pd - Power Dissipation:	256 mW
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	MUN5213DW1
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	Digital Transistors
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	28 mg

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Datasheet

MUN5213DW1T1G Datasheet

PCN

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
MXHTS:: 8541210100
ECCN:: EAR99

Dual NPN Bipolar Digital Transistors

onsemi Dual NPN Bipolar Digital Transistors are designed to replace a single device and the additional external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors (a series base resistor and a base-emitter resistor). By integrating these individual components into a single device, the BRT on these onsemi NPN Bipolar Digital Transistors simplifies circuit design and eliminates them. A BRT also reduces system cost and board space.