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onsemi EMD4DXV6 Digital Transistors ( BRTs)

onsemi EMD4DXV6 Digital Transistors ( BRTs) are designed to replace a single device and its external resistor bias network. The Bias Resistor Transistors (BRTs) integrate a single transistor with a monolithic bias network comprising two resistors - a series base resistor and a base-emitter resistor. These BRTs eliminate these individual components by integrating them into a single device. The EMD4DXV6 transistors feature a 50Vdc collector-base voltage, 50Vdc collector-emitter voltage, and 100mAdc collector current. These transistors support a -55°C to +150°C junction and storage temperature range.

Features

  • Simplifies circuit design
  • Reduces board space
  • Reduces component count
  • Pb-free devices
  • AEC−Q101 qualified and PPAP capable

Specifications

  • 50Vdc collector-base and
  • 50Vdc collector-emitter voltage
  • 100mAdc collector current
  • -55°C to +150°C junction and storage temperature range

Derating Curve

Performance Graph - onsemi EMD4DXV6 Digital Transistors ( BRTs)

Dimension Diagram

Mechanical Drawing - onsemi EMD4DXV6 Digital Transistors ( BRTs)
Published: 2026-07-27 | Updated: 2026-07-30