NTTFD4D0N04HLTWG

onsemi
863-NTTFD4D0N04HLTWG
NTTFD4D0N04HLTWG

Mfr.:

Description:
MOSFETs T8 40V DFN POWER CLIP 3X3 DUAL SYMMETRICAL

ECAD Model:
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In Stock: 3 688

Stock:
3 688 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,61 € 1,61 €
1,26 € 12,60 €
0,946 € 94,60 €
0,802 € 401,00 €
0,789 € 789,00 €
Full Reel (Order in multiples of 3000)
0,716 € 2 148,00 €
0,693 € 4 158,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
WDFN-12
N-Channel
2 Channel
40 V
60 A
4.5 mOhms
- 20 V, 20 V
2 V
18 nC
- 55 C
+ 150 C
26 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand: onsemi
Product Type: MOSFETs
Series: NTTFD4D0N04HL
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

NTTFD4D0N04HL & NTTFD9D0N06HL N-Channel MOSFETs

onsemi NTTFD4D0N04HL and NTTFD9D0N06HL N-Channel MOSFETs are POWERTRENCH® power clip symmetric dual-channel MOSFETs in a WQFN12 package. These devices include two specialized N-Channel MOSFETs in a dual package. The switch node is internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous MOSFET (Q1) are designed to provide optimal power efficiency. onsemi NTTFD4D0N04HL and NTTFD9D0N06HL N-Channel MOSFETs offer low RDS(on), low QG and capacitance, and low conduction/driver losses. Typical applications include DC-DC converters, general-purpose point of load, single-phase motor drives, computing, and communications

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (RDS(ON), ultra-low gate charge (Qg), and low (Qg) x RDS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Qg and Qoss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).