R8019KNZ4C13

ROHM Semiconductor
755-R8019KNZ4C13
R8019KNZ4C13

Mfr.:

Description:
MOSFETs TO247 800V N CH 19A

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 600

Stock:
600 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,51 € 8,51 €
6,67 € 66,70 €
5,57 € 557,00 €
4,73 € 2 838,00 €
4,31 € 5 172,00 €

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
Si
Through Hole
TO-247G-3
N-Channel
1 Channel
800 V
19 A
265 mOhms
30 V
4.5 V
65 nC
- 55 C
+ 150 C
208 W
Enhancement
Tube
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 60 ns
Forward Transconductance - Min: 2.5 S
Product Type: MOSFETs
Rise Time: 50 ns
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 35 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Small Signal Dual Channel MOSFETs

ROHM Semiconductor Small Signal Dual Channel MOSFETs feature low on-resistance and fast switching. These MOSFETs are RoHS compliant and include Pb-free plating. The dual channel MOSFETs operate from -55°C to 150°C temperature range. These MOSFETs are used in motor drives and switching applications.