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RD3E08BBJHRBTL

Name: ROHM Semiconductor RD3E08BBJHRBTL
Brand: ROHM Semiconductor
SKU: 755-RD3E08BBJHRBTL
Price: 2.96 EUR
Availability: InStock

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Mouser No:

755-RD3E08BBJHRBTL

Mfr. No:

RD3E08BBJHRBTL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 P-CH 30V 80A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RD3E08BBJHRBTL Datasheet

ECAD Model:

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Learn more about ROHM Semiconductor RD3E08BBJHRBTL

In Stock: 2 241

Stock:: 2 241 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,96 €	2,96 €
	1,93 €	19,30 €
	1,48 €	148,00 €
	1,24 €	620,00 €
	1,19 €	1 190,00 €
Full Reel (Order in multiples of 2500)
	1,01 €	2 525,00 €
	0,998 €	4 990,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	3.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	142 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	180 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	27 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	220 ns
Typical Turn-On Delay Time:	19 ns

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Datasheet

RD3E08BBJHRBTL Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Automotive 40A & 80A Power MOSFETs

ROHM Semiconductor Automotive 40A and 80A Power MOSFETs are N-channel and P-channel devices. These AEC-Q101 qualified MOSFETs feature low on-resistance, ±80A/±160A pulsed drain current, and up to 142W power dissipation. The 40A and 80A power MOSFETs operate from -55°C to 175°C temperature range and are 100% avalanche tested. These power MOSFETs are ideal for ADAS, automotive, and lighting applications.