TJ80S04M3L,LXHQ
See Product Specifications
Mfr.:
Description:
MOSFETs 100W 1MHz Automotive; AEC-Q101
In Stock: 4 116
-
Stock:
-
4 116 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
Pricing (EUR)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| 1,69 € | 1,69 € | |
| 1,20 € | 12,00 € | |
| 0,811 € | 81,10 € | |
| 0,653 € | 326,50 € | |
| 0,607 € | 607,00 € | |
| Full Reel (Order in multiples of 2000) | ||
| 0,525 € | 1 050,00 € | |
Datasheet
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- ECCN:
- EAR99
Finland

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2