TK095U65Z5,RQ

Name: Toshiba TK095U65Z5,RQ
Brand: Toshiba
SKU: 757-TK095U65Z5RQ
Price: 6.49 EUR
Availability: InStock

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Mouser No:

757-TK095U65Z5RQ

Mfr. No:

TK095U65Z5,RQ

Mfr.:

Toshiba

Description:

MOSFETs POWER MOSFET TRANSISTOR TOLL PD=230W F=1MHZ

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TK095U65Z5,RQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK095U65Z5,RQ

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TOLL-9
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	95 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	50 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	17 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	95 ns
Typical Turn-On Delay Time:	50 ns

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Datasheet

TK095U65Z5,RQ Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TKx Silicon N-Channel MOSFETs

Toshiba TKx Silicon N-Channel MOSFETs are available in U-MOSX-H and DTMOSVI types and offer exceptional performance characteristics. These MOSFETs are designed with fast reverse recovery times that enhance efficiency in high-speed switching applications by reducing the delay between the turn-off and turn-on states. The low drain-source on-resistance [R_DS(on)] contributes to minimal power losses and improved thermal management, making them ideal for applications requiring high current handling with low energy dissipation.