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TQM110NB04CR RLG

Name: Taiwan Semiconductor TQM110NB04CR RLG
Brand: Taiwan Semiconductor
SKU: 821-TQM110NB04CRRLG
Price: 1.67 EUR
Availability: InStock

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See Product Specifications

Mouser No:

821-TQM110NB04CRRLG

Mfr. No:

TQM110NB04CR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 40V, 54A, Single N-Channel Power MOSFET

Datasheet:

TQM110NB04CR RLG Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor TQM110NB04CR RLG

In Stock: 4 924

Stock:: 4 924 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 4924 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,67 €	1,67 €
	1,06 €	10,60 €
	0,703 €	70,30 €
	0,576 €	288,00 €
	0,505 €	505,00 €
Full Reel (Order in multiples of 2500)
	0,464 €	1 160,00 €
	0,458 €	2 290,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN56U-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Taiwan Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	19 ns
Forward Transconductance - Min:	72 S
Product Type:	MOSFETs
Rise Time:	22 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	4 ns
Part # Aliases:	TQM110NB04CR
Unit Weight:	372,608 mg

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Datasheet

TQM110NB04CR RLG Datasheet

Models

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TQMx Automotive Power MOSFETs

Taiwan Semiconductor TQMx Automotive Power MOSFETs are designed by trench technology for single and dual channels. These P dual channels are compatible with conventional PDFN packages. These MOSFETs feature a flat lead package suitable for compact designs with good thermal performance and a Wettable Flank (WF) for Automated Optical Inspection (AOI). The Taiwan Semiconductor TQMx MOSFET family qualifies for the AEC-Q101 standards to meet the high-performance requirement for automotive applications. These power MOSFETs operate at -55°C to 175°C and are halogen-free according to IEC 61249-2-21. Typical applications include 12V automotive systems, solenoid and motor control, automotive transmission control, and DC-DC converters.