VSMY12850

Vishay Semiconductors
78-VSMY12850
VSMY12850

Mfr.:

Description:
Infrared Emitters SurflightVCSEL 850nm 16mW/sr, +/-40deg.

Datasheet:
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In Stock: 6 292

Stock:
6 292 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,783 € 0,78 €
0,543 € 5,43 €
0,314 € 31,40 €
0,281 € 140,50 €
0,265 € 265,00 €
Full Reel (Order in multiples of 3000)
0,231 € 693,00 €
0,229 € 1 374,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
SMD/SMT
850 nm
16 mW/sr
70 mA
1.65 V
140 mW
- 40 C
+ 85 C
Reel
Cut Tape
MouseReel
Brand: Vishay Semiconductors
Fall Time: 10 ns
Illumination Colour: Infrared
Lens Shape: Circular
Moisture Sensitive: Yes
Product Type: IR Emitters (IR LEDs)
Rise Time: 10 ns
Factory Pack Quantity: 3000
Subcategory: Infrared Data Communications
Tradename: SurfLight
Viewing Angle: 40 deg
Unit Weight: 233,750 mg
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Attributes selected: 0

Datasheet

Models

PCN

Technical Resources

TARIC:
8541401000
CNHTS:
8541410000
USHTS:
8541410000
MXHTS:
85415001
BRHTS:
85415020
ECCN:
EAR99

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

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