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RD3N07BBHTL1

Name: ROHM Semiconductor RD3N07BBHTL1
Brand: ROHM Semiconductor
SKU: 755-RD3N07BBHTL1
Price: 2.99 EUR
Availability: InStock

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Mouser No:

755-RD3N07BBHTL1

Mfr. No:

RD3N07BBHTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs TO252 N-CH 80V 105A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RD3N07BBHTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RD3N07BBHTL1

In Stock: 3 206

Stock:: 3 206 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,99 €	2,99 €
	1,95 €	19,50 €
	1,37 €	137,00 €
	1,19 €	595,00 €
	1,14 €	1 140,00 €
Full Reel (Order in multiples of 2500)
	1,10 €	2 750,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	105 A
Rds On - Drain-Source Resistance:	4.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	89 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	38 ns
Forward Transconductance - Min:	25 S
Product Type:	MOSFETs
Rise Time:	16 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	63 ns
Typical Turn-On Delay Time:	32 ns

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Datasheet

RD3N07BBHTL1 Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel Automotive Grade Power MOSFETs

ROHM Semiconductor N-Channel Automotive Grade Power MOSFETs with low on-resistance dissipate power up to 142W. The lineup is offered in small, high-powered packages that greatly reduce the mounting area. These MOSFETs are AEC-Q101 qualified, RoHS compliant, and halogen free. Ideal applications for ROHM N-Channel Automotive Grade Power MOSFETs include advanced driver assistance systems (ADAS), body, lighting, and infotainment.