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BGSX22G5A10E6327XTSA1

Name: Infineon BGSX22G5A10E6327XTSA1
Brand: Infineon Technologies
SKU: 726-BGSX22G5A10E6327
Price: 1.38 EUR
Availability: InStock

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Mouser No:

726-BGSX22G5A10E6327

Mfr. No:

BGSX22G5A10E6327XTSA1

Mfr.:

Infineon Technologies

Description:

RF Switch ICs ANTENNA DEVICES

Datasheet:

BGSX22G5A10E6327XTSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies BGSX22G5A10E6327XTSA1

In Stock: 3 190

Stock:: 3 190

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On Order:: 9 000

Expected 05/03/2026
Factory Lead Time:: 8

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Packaging:

Full Reel (Order in multiples of 4500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,38 €	1,38 €
	0,839 €	8,39 €
	0,705 €	17,63 €
	0,535 €	53,50 €
	0,463 €	115,75 €
	0,406 €	203,00 €
	0,365 €	365,00 €
Full Reel (Order in multiples of 4500)
	0,312 €	1 404,00 €
	0,271 €	2 439,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	RF Switch ICs
RoHS:
Switch Configuration:	DPDT
Minimum Frequency:	100 MHz
Maximum Frequency:	6 GHz
Insertion Loss:	1.1 dB
Off Isolation - Typ:	31 dB
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Mounting Style:	SMD/SMT
Package/Case:	ATSLP-10
Technology:	Si
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Number of Switches:	Dual
Operating Supply Current:	55 uA
Product Type:	RF Switch ICs
Factory Pack Quantity:	4500
Subcategory:	Wireless & RF Integrated Circuits
Supply Voltage - Max:	3.4 V
Supply Voltage - Min:	1.65 V
Part # Aliases:	BGSX 22G5A10 E6327 SP001777960
Unit Weight:	2,480 mg

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Datasheet

BGSX22G5A10E6327XTSA1 Datasheet (PDF)

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Infineon's Latest Power and Sensing Guide (PDF)

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CNHTS:: 8542399000
USHTS:: 8542390090
ECCN:: 5A991.g

Antenna Centric Devices

Infineon Technologies Antenna Centric Devices significantly improve data rate for mobile cellular devices while minimizing power consumption. Modern 3G/4G smartphones need to cover a wide frequency range, while the multiband antennas need to be minimized in dimensions. Infineon antenna centric devices optimize antenna performance in the required frequency bands to improve reception of weak signals and radiate efficiency. This indirectly lowers current consumption from power amplifiers. Antenna-centric devices are designed to address various tuning concepts, supporting a large variation of antenna impedance with very low RON values and high voltage handling capabilities. Infineon antenna-centric devices are available with both GPIO (General Purpose Input/ Output) and the standardized MIPI RFFE (Mobile Industry Processor Interface for RF Front-End) interface.

Antenna Cross Switches

Infineon Technologies Antenna Cross Switches are engineered for advanced 5G SRS applications, delivering exceptional performance with high linearity of up to 39dBm input power. The switches enable switching between antennas to select the best-performing antenna for optimizing transmit power for an Up-Link (UL) or improved receive sensitivity for a Down-Link (DL). The antenna cross switches boast low current consumption, making the components efficient for energy-sensitive designs while maintaining low insertion loss for optimal signal integrity. With high port-to-port isolation of up to 7.125GHz, the devices effectively minimize interference between channels. The Infineon Technologies antenna cross switches also feature a maximum rapid switching time of just 2µs, ensuring quick response and reliable operation in dynamic communication environments.

BGSX22G5A10 DPDT Antenna Cross Switch

Infineon Technologies BGSX22G5A10 DPDT Antenna Cross Switch is designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS, including the inherent higher ESD robustness. The device has a very small size of only 1.1x1.5mm² and a maximum thickness of 0.55mm.