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SIHP065N60E-GE3

Name: Vishay SIHP065N60E-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHP065N60E-GE3
Price: 6.36 EUR
Availability: InStock

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Mouser No:

78-SIHP065N60E-GE3

Mfr. No:

SIHP065N60E-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs 600V Vds 30V Vgs TO-220AB

Datasheet:

SIHP065N60E-GE3 Datasheet

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Learn more about Vishay / Siliconix SIHP065N60E-GE3

In Stock: 851

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,36 €	6,36 €
	3,67 €	36,70 €
	3,17 €	317,00 €
	3,12 €	3 120,00 €

Alternative Packaging

Mfr. Part No.:

SIHP065N60E-BE3

Packaging:

Tube

Availability:

In Stock

Price:

7,08 €

Min:

Similar Product

Mfr.:

Vishay / Siliconix

Mfr. No:

SIHP065N60E-BE3

Description:

MOSFETs TO220 600V 40A N-CH MOSFET

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	57 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	98 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	13 ns
Product Type:	MOSFETs
Rise Time:	46 ns
Series:	SIHP E
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	28 ns
Part # Aliases:	SIHP065N60E-BE3
Unit Weight:	2 g

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The BE3 suffix version of this part number is the exact form, fit, and 
function of this part number.  The only difference is the country of 
origin. The BE3 suffix part number typically has a shorter lead-time 
if not already in stock at Mouser. 
Please contact a Mouser Technical Service Representative for 
further assistance 
5-0321-7

Filter Document:

Datasheet

SIHP065N60E-GE3 Datasheet

Models

PCN

Technical Resources

TO-220-1

REACH Certificate (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

4th Gen E Series MOSFETs

Vishay Semiconductors 4^th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4^th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). Vishay Semiconductors 4^th Gen E MOSFETs are available in TO-220AB, PowerPAK^® SO-8L, PowerPAK^® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.

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Vishay / Siliconix SiHP065N60E 600V E Series Power MOSFET is built on Vishay's energy-efficient E Series super junction technology and offers an ultra-low on-resistance that is 30% lower compared to the previous 600V E Series. The SiHP065N60E also delivers a 44% lower gate charge, which reduces conduction and switching losses to save energy. Vishay / Siliconix SiHP065N60E 600V E Series Power MOSFET is designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100% unclamped inductive switching (UIS) testing. This device is offered in a RoHS-compliant, halogen-free TO-220AB package. The SiHP065N60E provides high efficiency for power applications such as telecom, enterprise, and industrial.

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