Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Types of Semiconductors

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Results: 51
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 551In Stock
Min.: 1
Mult.: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,48 Ball BGA (6x8mm), RoHS 236In Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 272In Stock
2 880Expected 11/09/2026
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 267In Stock
Min.: 1
Mult.: 1

ISSI SRAM Pseudo SRAM, 64Mb 4Mb x16bits, CLL 230In Stock
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 302In Stock
2 500Expected 07/09/2026
Min.: 1
Mult.: 1
: 2 500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,48 Ball BGA (6x8mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v 1.95v,48 Ball BGA (6x8mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp Non-Stocked
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,1.7v 1.95v,48 Ball BGA (6x8mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 480
Mult.: 480

ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,70ns,2.5v 3.6v,48 Ball BGA, RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WV1M16EBLL-55BLI
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v 3.6v,48 Ball BGA, RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 480
Mult.: 480

ISSI IS66WV1M16EBLL-55BLI-TR
ISSI SRAM 16Mb,Pseudo SRAM,Async,1M x 16,55ns,2.5v 3.6v,48 Ball BGA, RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE2M16TCLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE2M16TCLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 480
Mult.: 480

ISSI IS66WVE2M16ECLL-70BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,55ns,VDD 1.7V 1.95V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE4M16ECLL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V 1.95V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVE4M16EALL-70BLI-TR
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500

ISSI IS66WVC2M16EALL-7010BLI-TR
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 2 500
Mult.: 2 500
: 2 500
ISSI IS66WVC2M16EALL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS Non-Stocked Lead-Time 16 Weeks
Min.: 480
Mult.: 480