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DMTH8001STLWQ-13

Name: Diodes Incorporated DMTH8001STLWQ-13
Brand: Diodes Incorporated
SKU: 621-DMTH8001STLWQ-13
Price: 5.08 EUR
Availability: InStock

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Mouser No:

621-DMTH8001STLWQ-13

Mfr. No:

DMTH8001STLWQ-13

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 61V-100V PowerDI1012-8 T&R 1.5K

Datasheet:

DMTH8001STLWQ-13 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMTH8001STLWQ-13

In Stock: 1 685

Stock:: 1 685 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1685 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,08 €	5,08 €
	3,63 €	36,30 €
	2,62 €	262,00 €
	2,61 €	1 305,00 €
	2,44 €	2 440,00 €
Full Reel (Order in multiples of 1500)
	2,44 €	3 660,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	270 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	138 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Product Type:	MOSFETs
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

DMTH8001STLWQ-13 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

DMTH8001STLWQ Automotive Enhancement-Mode MOSFET

Diodes Incorporated DMTH8001STLW Automotive Enhancement-Mode MOSFET is an N-channel MOSFET featuring a low on-resistance (1.1mΩ typical, 1.7mΩ maximum_⁾ and superior switching performance. The DMTH8001STLW has an 80V drain-source voltage, a 1µA zero gate voltage drain current, and ±100nA gate-source leakage. This device is AEC-Q101 qualified, supported by a PPAP, and optimized for automotive applications.