It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NTHL022N120M3S

Name: onsemi NTHL022N120M3S
Brand: onsemi
SKU: 863-NTHL022N120M3S
Price: 14.93 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTHL022N120M3S

Mfr. No:

NTHL022N120M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 22MOHM 1

Datasheet:

NTHL022N120M3S Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTHL022N120M3S

In Stock: 252

Stock:: 252 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,93 €	14,93 €
	10,87 €	108,70 €
	10,60 €	1 060,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	68 A
Rds On - Drain-Source Resistance:	30 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4.4 V
Qg - Gate Charge:	139 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	352 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Fall Time:	14 ns
Forward Transconductance - Min:	34 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	50 ns
Series:	NTHL022N120M3S
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	44 ns
Typical Turn-On Delay Time:	19 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTHL022N120M3S Datasheet

PCN

Material Composition Disclosure

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

M3S EliteSiC MOSFETs

onsemi M3S EliteSiC MOSFETs are solutions for high-frequency switching applications that employ hard-switched topologies. The onsemi M3S MOSFETs are designed to optimize performance and efficiency. The device has a remarkable ~40% reduction in total switching losses (Etot) compared to the 1200V 20mΩ M1 counterparts. The M3S EliteSiC MOSFETs are perfectly suited for various applications, including solar power systems, onboard chargers, and electric vehicle (EV) charging stations.

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

NTHL022N120M3S EliteSiC Silicon Carbide MOSFET

onsemi NTHL022N120M3S EliteSiC Silicon Carbide MOSFET is a 1200V, M3S, planar device optimized for fast switching applications. Planar technology reliably works with a negative gate voltage drive and turn off spikes on the gate. NTHL022N120M3S offers optimum performance when driven with an 18V gate drive (also works with a 15V gate drive). Available in a TO-247-3L package, the NTHL022N120M3S is ideal for industrial, UPS/ESS, solar, and EV charger applications.