CGHV31500F1

Name: MACOM CGHV31500F1
Brand: MACOM
SKU: 941-CGHV31500F1
Price: 1068.63 EUR
Availability: InStock

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Mouser No:

941-CGHV31500F1

Mfr. No:

CGHV31500F1

Mfr.:

MACOM

Description:

GaN FETs 500W, GaN HEMT, 50V, 2.7-3.1GHz,Long-pulse, Flange

Datasheet:

CGHV31500F1 Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	This product may require additional documentation to export from the United States.
RoHS:	N
Mounting Style:	Screw Mount
Package/Case:	440226-2
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	150 V
Id - Continuous Drain Current:	500 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 75 C
Pd - Power Dissipation:	418 W
Brand:	MACOM
Maximum Drain Gate Voltage:	- 2.7 V
Maximum Operating Frequency:	3.1 GHz
Minimum Operating Frequency:	2.7 GHz
Output Power:	500 W
Packaging:	Tray
Product Type:	GaN FETs
Factory Pack Quantity:	1
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	GaN HEMT

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Datasheet

CGHV31500F1 Datasheet (PDF)

PCN

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.a.2

CGHV31500F1 2.7GHz to 3.1GHz, 500W GaN HEMT

MACOM CGHV31500F1 2.7GHz to 3.1GHz, 500W GaN HEMT offers high efficiency and high gain designed explicitly for the 2.7GHz to 3.1GHz S-Band radar band. The gallium nitride (GaN) high electron mobility transistor (HEMT) delivers an extended pulse capability to meet emerging radar architecture trends.