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RD3G08CBLHRBTL

Name: ROHM Semiconductor RD3G08CBLHRBTL
Brand: ROHM Semiconductor
SKU: 755-RD3G08CBLHRBTL
Price: 2.3 EUR
Availability: InStock

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See Product Specifications

Mouser No:

755-RD3G08CBLHRBTL

Mfr. No:

RD3G08CBLHRBTL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Nch 40V 80A, TO-252 (DPAK), Power MOSFET for Automotive

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RD3G08CBLHRBTL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RD3G08CBLHRBTL

In Stock: 2 490

Stock:: 2 490 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,30 €	2,30 €
	1,49 €	14,90 €
	1,02 €	102,00 €
	0,821 €	410,50 €
	0,787 €	787,00 €
Full Reel (Order in multiples of 2500)
	0,767 €	1 917,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	14 ns
Forward Transconductance - Min:	14 S
Product Type:	MOSFETs
Rise Time:	17 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	32 ns

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Datasheet

RD3G08CBLHRBTL Datasheet

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

RD3G08CBLHRB N-Channel Power MOSFET

ROHM Semiconductor RD3G08CBLHRB N-Channel Power MOSFET is a 40V, 80A, 100% Avalanche-tested semiconductor device with a low on-resistance. This power MOSFET features a ±160A pulse drain current, ±20V gate-source voltage, and 96W power dissipation. The RD3G08CBLHRB N-channel power MOSFET is AEC-Q101 qualified, RoHS-compliant, and comes in a TO-252 (DPAK) package. This power MOSFET operates within the -55°C to 175°C temperature range. Typical applications include Advanced Driver Assistance Systems (ADAS), infotainment, lighting, and body electronics.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.