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DMN52D0UV-7

Name: Diodes Incorporated DMN52D0UV-7
Brand: Diodes Incorporated
SKU: 621-DMN52D0UV-7
Price: 0.34 EUR
Availability: InStock

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Mouser No:

621-DMN52D0UV-7

Mfr. No:

DMN52D0UV-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET BVDSS: 41V-60V SOT563 T&R 3K

Datasheet:

DMN52D0UV-7 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMN52D0UV-7

In Stock: 6 009

Stock:: 6 009 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,344 €	0,34 €
	0,251 €	2,51 €
	0,158 €	15,80 €
	0,117 €	58,50 €
	0,09 €	90,00 €
Full Reel (Order in multiples of 3000)
	0,078 €	234,00 €
	0,068 €	408,00 €
	0,054 €	486,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT563-6
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	480 mA
Rds On - Drain-Source Resistance:	2 Ohms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	490 mV
Qg - Gate Charge:	1.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	890 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	38.5 ns
Product Type:	MOSFETs
Rise Time:	11.3 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	33 ns
Typical Turn-On Delay Time:	1.05 ns

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Datasheet

DMN52D0UV-7 Datasheet (PDF)

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TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

DMN52D0UV N-Channel Enhancement Mode MOSFET

Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET is a dual N-channel MOSFET designed to minimize R_DS(ON) and maintain impressive switching performance. This MOSFET features low input capacitance, fast switching speed, low input/output leakage, and an ultra-small surface mount package. The DMN52D0UV MOSFET is ESD-protected, Lead-free, RoHS compliant, and Halogen and Antimony free. This MOSFET offers a very low gate threshold voltage and operates within the -55°C to 150°C temperature range. Typical applications include battery management systems, power management functions, and load switches.